IXGH72N60A3 IXYS, IXGH72N60A3 Datasheet - Page 4

• Manufacturer Part Number: IXGH72N60A3
• Description: IGBT 600V TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH72N60A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.35V @ 15V, 60A
• Current - Collector (ic) (max): 75A
• Power - Max: 540W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 72
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 250
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
100,000
10,000
1,000
1.00
0.10
0.01
130
120
110
100
100
90
80
70
60
50
40
30
20
10
0.0001
10
0
0
0
f
20
= 1 MHz
5
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
15
I
C
80
- Amperes
V
0.001
CE
100
- Volts
20
T
J
= - 40ºC
120
25
Fig. 11. Maximum Transient Thermal Impedance
25ºC
125ºC
140
30
C oes
C res
160
C ies
35
180
0.01
Pulse Width - Seconds
40
200
160
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
150
20
T
R
dV / dt < 10V / ns
V
I
I
J
G
C
G
0.1
CE
= 125ºC
= 60A
= 10 mA
= 3Ω
= 300V
40
200
60
250
Fig. 8. Gate Charge
80
Q
300
G
V
- NanoCoulombs
100 120 140 160
CE
350
- Volts
400
1
450
IXGH72N60A3
IXGT72N60A3
IXYS REF: G_72N60A3 (76)3-25-08-B
500
180 200 220 240
550
600
650
10