IRGP20B120U-EP International Rectifier, IRGP20B120U-EP Datasheet

IGBT ULT FAST 1200V 40A TO247AD

IRGP20B120U-EP

Manufacturer Part Number
IRGP20B120U-EP
Description
IGBT ULT FAST 1200V 40A TO247AD
Manufacturer
International Rectifier
Datasheet

Specifications of IRGP20B120U-EP

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.85V @ 15V, 40A
Current - Collector (ic) (max)
40A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
3.2V
Power Dissipation Pd
300W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGP20B120U-EP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGP20B120U-EP
Manufacturer:
IR
Quantity:
20 000
www.irf.com
θ
θ
θ
θ
CE
G
IRGP20B120U-EP
E
C
TO-247AD
GE
CE(on) typ.
CES
C
=
PD- 95897
09/14/04
1

Related parts for IRGP20B120U-EP

IRGP20B120U-EP Summary of contents

Page 1

... CE θ θ θ θ www.irf.com IRGP20B120U-EP C CES CE(on) typ TO-247AD PD- 95897 = C 1 09/14/04 ...

Page 2

... IRGP20B120U-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V / ∆Tj Temperature Coeff. of Breakdown Voltage (BR)CES Collector-to-Emitter Saturation V Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V / ∆Tj Temperature Coeff. of Threshold Voltage GE(th) g Forward Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... Fig.2 - Power Dissipation vs. Case 320 280 240 200 160 120 120 160 0 1000 PULSED 2µs 10µs 100 100µ s 1ms 10 10ms DC 1 1000 10000 1 IRGP20B120U-EP Temperature 40 80 120 T (°C) C Fig.4 - Reverse Bias SOA Tj = 150° 15V GE 10 100 1000 V (V) CE 160 10000 3 ...

Page 4

... IRGP20B120U-EP Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300µ 18V 15V 12V 10V ( Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300µ 18V 15V 12V 10V (V) CE Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300µ 18V 15V 12V 10V ...

Page 5

... V GE www.irf.com =10A CE I =20A =40A ( 250 225 200 175 150 125 I =10A CE I =20A CE 100 I =40A (V) IRGP20B120U-EP Fig.10 - Typical Tj= 25° (V) GE Fig.12 - Typ. Transfer Characteristics V =20V; tp=20µ Tj=25°C Tj=125°C Tj=125°C Tj=25° ( =10A =20A =40A ...

Page 6

... IRGP20B120U-EP Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200µH; V Ω Rg= 6000 5000 4000 3000 2000 1000 (A) C Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200µ =20A 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 ...

Page 7

... SINGLE PULSE 0.001 0.00001 0.00010 www.irf.com Fig.23 - Typ. Gate Charge vs ies oes res 100 (V) 0.00100 0.01000 t , Rectangular Pulse Duration (sec) 1 IRGP20B120U-EP I =20A; L=600µH C 600V 40 80 120 160 Q , Total Gate Charge (nC Notes: 1. Duty factor Peak thJC 0.10000 1.00000 GE 800V 200 C 10 ...

Page 8

DUT 0 1K Driver DC DUT VCC R = ICM DUT VCC 80 V DIODE CLAMP 900V VCC L + DUT - Rg L DUT / DRIVER Rg L DUT Rg www.irf.com 1000V VCC VCC ...

Page 9

... C 800 600 400 200 0 - (µs) IRGP20B120U-EP 90% test current t r TEST CURRENT 10% test current Eon Loss -0.1 0.0 0.1 0 (µs) 250 200 150 100 -20 0.3 9 ...

Page 10

EXAMPLE: THIS IS AN IRGP30B120KD-E WIT H ASSEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 SEMBLY LINE "H" Note: "P" sembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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