IRGP20B120U-EP International Rectifier, IRGP20B120U-EP Datasheet - Page 2

• Manufacturer Part Number: IRGP20B120U-EP
• Description: IGBT ULT FAST 1200V 40A TO247AD
• Manufacturer: International Rectifier

Specifications of IRGP20B120U-EP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.85V @ 15V, 40A
• Current - Collector (ic) (max): 40A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AD
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 3.2V
• Power Dissipation Pd: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGP20B120U-EP

IRGP20B120U-EP
∆V
∆V
V
V
V
g
I
I
Q
Q
Q
E
E
E
E
E
E
td(on)
tr
td(off)
tf
C
C
C
RBSOA
SCSOA
Le
* Used Diode HF40D120ACE
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Switching Characteristics @ T
CES
GES
fe
(BR)CES
CE(on)
GE(th)
on
off
tot
on
off
tot
g
ge
gc
ies
oes
res
(BR)CES
GE(th)
2
/ ∆Tj
/ ∆Tj
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss *
Turn-Off Switching Loss *
Total Switching Loss *
Turn-on Switching Loss *
Turn-off Switching Loss *
Total Switching Loss *
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse bias safe operating area
Short Circuit Safe Operating Area
Internal Emitter Inductance
Collector-to-Emitter Saturation
Parameter
Parameter
Voltage
J
= 25°C (unless otherwise specified)
1200
Min.
13.6
Min.
4.0
10
FULL SQUARE
1482 2200
1275 1800
1350 1550
1960 2425
2200
Typ. Max. Units
+1.2
3.05
3.37
4.23
3.89
4.31
- 1.2
15.7
Typ. Max. Units
420
169
850
425
610
204
210
5.0
----
24
82
50
20
24
85
13
±100
1050
3.45
3.80
4.85
4.50
5.06
17.8
250
750
254
126
650
875
230
6.0
----
36
65
30
35
mV/
V/°C
nH
µA
nA
nC
µJ
µJ
ns
pF
µs
V
V
V
S
o
C
V
V
I
I
I
I
I
V
V
V
V
V
V
V
I
V
V
I
V
T
and diode reverse recovery
Ic = 20A, V
V
T
and diode reverse recovery
Ic = 20A, V
V
T
V
V
f = 1.0 MHz
T
V
Rg = 5Ω, V
T
V
Rg = 5Ω, V
Measured 5 mm from the package.
C
C
C
C
C
C
C
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
CC
CC
CC
= 20A, V
= 25A, V
= 40A, V
= 20A, V
= 25A, V
= 20A
= 20A, V
= 25
= 125
= 125
= 150
= 150
= 0V,I
= 0V, I
= 0V, V
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 600V
= 15V
= 15V, Rg = 5Ω, L = 200µH
= 15V, Rg = 5Ω, L = 200µH
= 15V, Rg = 5Ω, L = 200µH
= 0V
= 30V
= 1000V, V
= 900V, V
o
C, Energy losses include tail
o
GE
GE
C, Energy losses include tail
o
o
o
C
C, Ic = 120A
C
, I
, I
c
c
GE
GE
GE
GE
GE
CC
CC
CC
GE
GE
=250 µA
CE
Conditions
Conditions
C
C
CE
CE
= 1 mA ( 25 -125
C
= 250 µA
= 1 mA (25 -125
= 20A, PW=80µs
= 600V
= 600V
= 15V
= 15V
= 15V
= 15V, T
= 15V, T
= 600V
= +15V to 0V
= +15V to 0V
= 1200V
P
= 1200V, T
= 1200V, T
P
= 1200V
= 1200V
J
J
= 125°C
= 125°C
J
J
=150°C
=125°C
o
C )
o
C)
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8,9,10,11
WF 1 & 2
Fig.
Fig.
12, 14
13, 15
WF1
WF2
WF1
WF2
WF3
CT 1
CT 4
CT 4
CT 4
CT 2
CT 3
5, 6
7, 8
10
17
16
9
4