IRG4PSH71KD International Rectifier, IRG4PSH71KD Datasheet

IGBT W/DIODE 1200V 78A SUPER-247

IRG4PSH71KD

Manufacturer Part Number
IRG4PSH71KD
Description
IGBT W/DIODE 1200V 78A SUPER-247
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PSH71KD

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 42A
Current - Collector (ic) (max)
78A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4PSH71KD

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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Benefits
Absolute Maximum Ratings
Thermal Resistance\ Mechanical
www.irf.com
• Hole-less clip/pressure mount package compatible
• High short circuit rating IGBTs, optimized for
• Minimum switching losses combined with low
• Tightest parameter distribution
• IGBT co-packaged with ultrafast soft recovery
• Creepage distance increased to 5.35mm
• Highest current rating copack IGBT
• Maximum power density, twice the power
• HEXFRED
Features
R
R
R
R
V
I
I
I
I
I
I
t
V
P
P
T
T
C
C
CM
LM
F
FM
sc
STG
handling of the TO-247, less space than TO-264
IGBT, to minimize EMI, noise and switching losses
CES
GE
D
D
J
motorcontrol
with TO-247 and TO-264, with reinforced pins
conduction losses
antiparallel diode
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diode optimized for operation with
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
PRELIMINARY
G
n-ch an nel
20.0(2.0)
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PSH71KD
C
E
SUPER - 247
-55 to +150
Max.
6 (0.21)
1200
± 20
156
156
156
350
140
Typ.
78
42
42
10
0.24
–––
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
V
UltraFast IGBT
GE
CES
= 15V, I
PD - 91688A
Max.
0.36
0.69
–––
–––
–––
= 1200V
38
= 2.97V
C
= 42A
N (kgf)
Units
Units
g (oz)
°C/W
µs
°C
V
A
V
W
1
5/11/99

Related parts for IRG4PSH71KD

IRG4PSH71KD Summary of contents

Page 1

... JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Recommended Clip Force Weight www.irf.com IRG4PSH71KD PRELIMINARY n-ch an nel SUPER - 247 -55 to +150 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ...

Page 2

... IRG4PSH71KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...

Page 3

... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 T = 150 15V 1 4.0 5.0 5 Fig Typical Transfer Characteristics IRG4PSH71KD ° ° C sink riv ifie tio ° J ° 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PSH71KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature .50 0 0.05 0.0 2 0.01 SIN Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 -60 -40 -20 125 150 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0.1 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 -60 -40 - Fig Typical Switching Losses vs. IRG4PSH71KD = 400V = 42A 100 200 300 400 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 5.0 = 15V = 800V 100 120 140 160 T , Junction Temperature ( C ) ° ...

Page 6

... IRG4PSH71KD 5 150 C ° 800V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 V = 20V 125 C J 100 10 SAFE OPERATING AREA 1 80 100 100 1000 10000 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com ...

Page 7

... I = 42A 21A /dt - (A/µ Fig Typical Stored Charge vs. di www.irf.com 84A 42A 21A Fig Typical Recovery Current vs 84A 42A 21A /dt Fig Typical di f IRG4PSH71KD I = 84A 42A 21A 00V 5° ° /dt - (A/µ / 00V ° ° /dt - (A/µ /dt vs. di /dt (rec ...

Page 8

... IRG4PSH71KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - , µ S ...

Page 9

... Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 800V Figure 20. Pulsed Collector Current IRG4PSH71KD Test Circuit 800V @25°C C Test Circuit 9 ...

Page 10

... IRG4PSH71KD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 ...

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