IRG4BC20UD-STRL International Rectifier, IRG4BC20UD-STRL Datasheet
IRG4BC20UD-STRL
Specifications of IRG4BC20UD-STRL
Related parts for IRG4BC20UD-STRL
IRG4BC20UD-STRL Summary of contents
Page 1
... Storage Temperature Range STG Soldering Temperature, for 10 sec. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4BC20UD ultrafast, N-channel 300 (0.063 in. (1.6mm) from case) Typ. 1.44 PD- 94077 UltraFast CoPack IGBT 600V CES V = 1.85V CE(on) typ ...
Page 2
... IRG4BC20UD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES ...
Page 3
... PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage ( Fig Typical Output Characteristics www.irf.com (Load Current = I of fundamental) RMS 150° 15V 0 Fig Typical Transfer Characteristics A IRG4BC20UD ° ° riv ifie los ffe Diss ip ation = 13W 0° ° µ IDTH -to-Em itter Volta ge (V) ...
Page 4
... IRG4BC20UD ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature 0. . .01 SIN Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 µ 2.2 1.8 1.4 1.0 -60 -40 - Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ectangular Pulse Duration (sec . 3 tio (°C ) ...
Page 5
... lle itte lta Fig Typical Capacitance vs. Collector-to-Emitter Voltage ° . sista Fig Typical Switching Losses vs. Gate Resistance www.irf.com Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. IRG4BC20UD Gate-to-Emitter Voltage = - ctio (° Junction Temperature ...
Page 6
... IRG4BC20UD-S 1 ° 0.9 0.6 0.3 0 lle cto r- itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.4 0.8 1.2 1.6 2.0 2.4 2 lta ° TIN Collecto r-to-E m itter V oltage ( Fig Turn-Off SOA 3 ...
Page 7
... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs ° ° 4 /dt Fig Typical di f IRG4BC20UD ° ° 4 / /µ /µs) f /dt vs. di /dt (rec / ...
Page 8
... IRG4BC20UD-S Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on .T. 90% 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Ic tx ...
Page 9
... Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current IRG4BC20UD-S Test Circuit 480V @25°C C Test Circuit 9 ...
Page 10
... IRG4BC20UD Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Pak Part Marking Information TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...
Page 11
... G 0.1%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.1/01 IRG4BC20UD-S 0 0 4.30 (. 3.90 (. 4.72 (. 4.52 (. ...
Page 12
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...