IRG4BC20UD-STRL International Rectifier, IRG4BC20UD-STRL Datasheet

DIODE IGBT 600V 13A COPAK D2PAK

IRG4BC20UD-STRL

Manufacturer Part Number
IRG4BC20UD-STRL
Description
DIODE IGBT 600V 13A COPAK D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC20UD-STRL

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 6.5A
Current - Collector (ic) (max)
13A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
IRG4BC20UDSTRL
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Generation 4 IGBTs offers highest efficiencies
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for
Thermal Resistance
www.irf.com
• UltraFast: Optimized for high operating frequencies
• Generation 4 IGBT design provides tighter para-
• IGBT co-packaged with HEXFRED
• Industry standard D
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
mode
IGBTs . Minimized recovery characteristics require
equivalent industry-standard Generation 3 IR IGBTs
C
C
CM
LM
F
FM
8-40 kHz in hard switching, >200kHz in resonant
meter distribution and higher efficiency than
Generation 3
available
less/no snubbing
J
STG
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
CES
GE
D
D
@ T
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
2
Pak package
Parameter
Parameter
TM
ultrafast,

G
N-channel
IRG4BC20UD-S
300 (0.063 in. (1.6mm) from case)
Typ.
1.44
–––
–––
0.5
C
E
-55 to +150
UltraFast CoPack IGBT
Max.
± 20
600
6.5
7.0
13
52
52
52
60
D
24
2
Pak
@V
V
CE(on) typ.
V
Max.
GE
–––
–––
2.1
40
CES
= 15V, I
°C
= 600V
= 1.85V
PD- 94077
C
= 6.5A
Units
Units
g (oz)
°C/W
1/12/01
°C
W
V
A
V
1

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IRG4BC20UD-STRL Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4BC20UD ultrafast, N-channel  300 (0.063 in. (1.6mm) from case) Typ. 1.44 PD- 94077 UltraFast CoPack IGBT 600V CES V = 1.85V CE(on) typ ...

Page 2

... IRG4BC20UD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES ...

Page 3

... PULSE WIDTH 0.1 0 Collector-to-Emitter Voltage ( Fig Typical Output Characteristics www.irf.com (Load Current = I of fundamental) RMS 150° 15V 0 Fig Typical Transfer Characteristics A IRG4BC20UD ° ° riv ifie los ffe Diss ip ation = 13W 0° ° µ IDTH -to-Em itter Volta ge (V) ...

Page 4

... IRG4BC20UD ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature 0. . .01 SIN Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 µ 2.2 1.8 1.4 1.0 -60 -40 - Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ectangular Pulse Duration (sec . 3 tio (°C ) ...

Page 5

... lle itte lta Fig Typical Capacitance vs. Collector-to-Emitter Voltage ° . sista Fig Typical Switching Losses vs. Gate Resistance www.irf.com Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. IRG4BC20UD Gate-to-Emitter Voltage = - ctio (° Junction Temperature ...

Page 6

... IRG4BC20UD-S 1 ° 0.9 0.6 0.3 0 lle cto r- itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.4 0.8 1.2 1.6 2.0 2.4 2 lta ° TIN Collecto r-to-E m itter V oltage ( Fig Turn-Off SOA 3 ...

Page 7

... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs ° ° 4 /dt Fig Typical di f IRG4BC20UD ° ° 4 / /µ /µs) f /dt vs. di /dt (rec / ...

Page 8

... IRG4BC20UD-S Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on .T. 90% 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Ic tx ...

Page 9

... Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current IRG4BC20UD-S Test Circuit 480V @25°C C Test Circuit 9 ...

Page 10

... IRG4BC20UD Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Pak Part Marking Information TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...

Page 11

... G 0.1%. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.1/01 IRG4BC20UD-S 0 0 4.30 (. 3.90 (. 4.72 (. 4.52 (. ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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