DMP58D0SV-7 Diodes Inc, DMP58D0SV-7 Datasheet - Page 2

• Manufacturer Part Number: DMP58D0SV-7
• Description: MOSFET P-CH 50V 160MA SOT-563
• Manufacturer: Diodes Inc

Specifications of DMP58D0SV-7

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 160mA
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Input Capacitance (ciss) @ Vds: 27pF @ 25V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.16 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMP58D0SVDITR

DMP58D0SV
Document number: DS31293 Rev. 4 - 2
0.50
0.40
0.30
0.20
0.10
0.00
10
1.8
1.6
1.4
1.2
0.8
0.6
2.0
1.0
1
0.001
-50
0
Fig. 5 On-Resistance Variation with Temperature
0.5
-25
vs. Drain Current and Gate Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
Fig. 1 Typical Output Characteristics
J
V
V
DS
1
Fig. 3 Typical On-Resistance
GS
GS
-I , DRAIN CURRENT (A)
= -5V
= -10V
0
D
1.5
0.01
25
2
V
GS
2.5
V
50
= -10V
GS
= -1.8V
3
75
0.1
I = -250mA
V
D
GS
3.5
= -10V
100
V
V
GS
4
GS
I = -100mA
D
V
= -4.5V
GS
125 150
= -2.5V
4.5
= -5V
1
5
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100
0.4
0.3
0.2
0.1
30
25
20
15
10
10
5
0
0
1
0
1
0
Fig. 4 Typical Drain-Source On-Resistance
5
1.5
0.05
Fig. 2 Typical Transfer Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
-V
vs. Drain Current and Temperature
DS
GS
V
10
Fig. 6 Typical Capacitance
GS
, GATE SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
D
2
= -5V
0.1
15
2.5
T = -55°C
A
T = 125°C
T = 25°C
A
0.15
20
A
T = 85°C
3
T = 25°C
T = -55°C
A
A
A
C
C
C
25
rss
iss
oss
0.2
T = 150°C
A
V
f = 1MHz
3.5
GS
DMP58D0SV
30
T = 85°C
= 0V
A
T = 150°C
0.25
A
© Diodes Incorporated
35
4
4.5
0.3
40
July 2009