DMP58D0SV-7 Diodes Inc, DMP58D0SV-7 Datasheet - Page 3

• Manufacturer Part Number: DMP58D0SV-7
• Description: MOSFET P-CH 50V 160MA SOT-563
• Manufacturer: Diodes Inc

Specifications of DMP58D0SV-7

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 160mA
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Input Capacitance (ciss) @ Vds: 27pF @ 25V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.16 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMP58D0SVDITR

Ordering Information
Marking Information
Notes:
Date Code Key
Notes:
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
Month
Code
Code
Year
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
1.0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
-50
DMP58D0SV -7
Part Number
-25
0.001
0.01
Jan
T , AMBIENT TEMPERATURE (°C)
0.1
0.00001
2007
1
A
1
U
0
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
25
Feb
2
(Note 7)
(Note 6)
0.0001
2008
V
50
I = -250µA
D
Mar
3
75
0.001
100
2009
MPA
W
Apr
4
125 150
Fig. 9 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.01
YM
May
www.diodes.com
2010
5
X
SOT-563
Case
3 of 5
MPA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
0.1
Jun
6
2011
Y
0.001
0.01
0.1
1
Jul
0.2
7
1
P(pk)
T = 85°C
Duty Cycle, D = t /t
T - T = P * R
A
T = 125°C
R
Fig. 8 Diode Forward Voltage vs. Current
J
A
R
2012
θ
V
JA
-V , SOURCE-DRAIN VOLTAGE (V)
θ
GS
Z
T = 150°C
JA
Aug
t
(t) = r(t) * R
A
A
0.4
1
SD
8
t
= 0V
= 313°C/W
2
10
θ
JA
1 2
θ
JA
(t)
Sep
0.6
2013
9
A
100
3000/Tape & Reel
Packaging
0.8
Oct
T = -55°C
O
A
T = 25°C
A
2014
1,000
DMP58D0SV
B
1
Nov
N
© Diodes Incorporated
1.2
2015
July 2009
C
Dec
D