SI5511DC-T1-E3 Vishay, SI5511DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5511DC-T1-E3
• Description: MOSFET N/P-CH 30V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5511DC-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 2.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 435pF @ 15V
• Power - Max: 2.1W, 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A @ N Channel or 2.3 A @ P Channel
• Power Dissipation: 2100 mW @ N Channel or 1300 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5511DC-T1-E3TR

Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
15
12
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
5
4
3
2
1
0
0.0
0
0
I
D
= 4.8 A
1
0.6
3
V
DS
Output Characteristics
Q
V
- Drain-to-Source Voltage (V)
g
DS
V
V
- Total Gate Charge (nC)
I
2
D
GS
GS
= 15 V
Gate Charge
- Drain Current (A)
1.2
6
= 5 V thru 3 V
= 2.5 V
3
V
GS
1.8
9
= 24 V
4
V
V
V
V
GS
GS
GS
GS
2.4
12
= 4.5 V
= 2.5 V
= 2 V
= 1.5 V
5
3.0
15
6
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
5
0.5
V
V
T
DS
0
GS
Transfer Characteristics
J
T
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
10
= 25 °C
Capacitance
25
T
1.0
C
= 125 °C
S10-0547-Rev. C, 08-Mar-10
50
15
Document Number: 73787
C
C
V
I
1.5
D
oss
iss
GS
75
= 4.8 A
20
= 4.5 V
V
I
D
100
GS
T
= 3.7 A
C
2.0
= 2.5 V
= - 55 °C
25
125
150
2.5
30