SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet
SI5509DC-T1-E3
Specifications of SI5509DC-T1-E3
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SI5509DC-T1-E3 Summary of contents
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... Bottom View Si5509DC -T1-E3 Ordering Information: (Lead (Pb)-free) Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5509DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... DD L ≅ GEN ° 2 1 N-Channel 2.4 A, dI/dt = 100 A/µ P-Channel 1.5 A, dI/ 100 A/µ Si5509DC Vishay Siliconix a Min. Typ. Max N-Ch 95 143 = 1 Ω P-Ch 75 113 N- P- Ω N-Ch 3.75 P-Ch - 3.75 N- N-Ch 0.8 1.2 P- ...
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... Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 2.5 V 0.10 GS 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge g Gate Charge www.vishay.com 2 1.5 V 2 °C ...
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... Limited DS(on 0 °C 0.01 A Single Pulse BVDSS Limited 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5509DC Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power ...
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... Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 73629 S10-0547-Rev. B, 08-Mar- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5509DC Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( thJA 4 ...
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... Si5509DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.6 1.2 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge g Gate Charge www.vishay.com 2 1 2.4 3.0 600 ...
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... Limited DS(on 0.1 BVDSS Limited °C A Single Pulse 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Case Si5509DC Vishay Siliconix 0.3 0 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73629. Document Number: 73629 S10-0547-Rev. B, 08-Mar- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5509DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... E 1.825 1.90 1.975 0.072 E 1.55 1.65 1.70 0.061 1 e 0.65 BSC L 0.28 − 0.42 0.011 S 0.55 BSC 5_Nom Package Information Vishay Siliconix Backside View DETAIL X INCHES Nom Max − 0.043 0.012 0.014 0.006 0.008 − 0.0015 0.120 0.122 ...
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... The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further. An example of this method is implemented on the Vishay 1 Siliconix Evaluation Board described in the next section ...
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... AN812 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 30_C/W typical, 40_C/W maximum for the dual device. The “foot” is the drain lead of the device as it connects with the body. This is identical to the dual ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...
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