SI5509DC Vishay, SI5509DC Datasheet
SI5509DC
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SI5509DC Summary of contents
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... Bottom View Ordering Information: Si5509DC-T1–E3 (Lead (Pb)–Free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C) Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current Source-Drain Current Diode Current Source Drain Current Diode Current Maximum Power Dissipation ...
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... N-Channel N-Channel 4 Channel P-Channel V = – –4 MHz MHz g Si5509DC Vishay Siliconix a Min Typ N-Ch 20 P-Ch –20 N-Ch 18.4 P-Ch –15.1 N-Ch –3.4 P-Ch 2.2 0 N-Ch –0.7 P- N- P- P-Ch – ...
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... –1 N-Channel N-Channel 2.4 A, di/dt = 100 A/ms P-Channel P Channel –1.5 A, di/dt = –100 A/ms Si5509DC Vishay Siliconix a Min Typ 6 N- P- N- N-Ch 60 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch ...
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... Q – Total Gate Charge (nC) g www.vishay.com 4 New Product 2 1 2 Si5509DC Vishay Siliconix Transfer Characteristics 125 – 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance 600 ...
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... Limited by r DS(on 0 Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum which DS(on) Si5509DC Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0.20 0.15 0.10 = 125 0. 0. – Gate-to-Source Voltage (V) GS Single Pulse Power 50 40 ...
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... It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 New Product _ 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 125 150 0 Si5509DC Vishay Siliconix Power De-Rating 100 125 150 T – Case Temperature (_C) C Document Number: 73629 S–60417—Rev. A, 20-Mar-06 ...
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... Document Number: 73629 S–60417—Rev. A, 20-Mar-06 New Product _ –2 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) Si5509DC Vishay Siliconix Notes Duty Cycle _C/W 2 ...
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... Total Gate Charge (nC) g www.vishay.com 8 New Product 2 1 2.4 3.0 600 500 400 300 200 100 Si5509DC Vishay Siliconix Transfer Characteristics 125 – 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C ...
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... Limited by r DS(on 0 0.01 Single Pulse 0.001 0 – Drain-to-Source Voltage ( minimum which DS(on) Si5509DC Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0.3 0.2 = 125 0 0 – Gate-to-Source Voltage (V) GS Single Pulse Power 50 40 ...
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... It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 New Product _ 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 125 150 0 Si5509DC Vishay Siliconix Power De-Rating 100 125 150 T – Case Temperature (_C) C Document Number: 73629 S–60417—Rev. A, 20-Mar-06 ...
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... New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si5509DC Vishay Siliconix Notes Duty Cycle _C/W 2 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...