SI5509DC Vishay, SI5509DC Datasheet - Page 5

• Manufacturer Part Number: SI5509DC
• Description: N- And P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73629
S–60417—Rev. A, 20-Mar-06
100.00
10.00
1.00
0.10
1.5
1.3
1.1
0.9
0.7
0.5
0.0
–50
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
0.4
Threshold Voltage
J
– Temperature (_C)
25
I
D
0.6
= 250 mA
50
T
A
= 150 _C
75
0.8
0.01
T
100
100
0.1
A
10
1
= 25 _C
0.1
1.0
125
*V
_
Safe Operating Area, Junction-to-Case
GS
Limited by r
u minimum V
1.2
150
V
New Product
DS
Single Pulse
T
– Drain-to-Source Voltage (V)
A
DS(on)
= 25 _C
1
GS
at which r
DS(on)
10
0.20
0.15
0.10
0.05
0.00
is specified
50
40
30
20
10
0
10 ms
100 ms
10 s
1 s
dc
10
1
–4
On-Resistance vs. Gate-to-Source Voltage
10
100
–3
V
2
GS
10
–2
– Gate-to-Source Voltage (V)
Single Pulse Power
Time (sec)
10
Vishay Siliconix
–1
3
1
Si5509DC
T
T
A
A
10
= 25 _C
= 125 _C
4
www.vishay.com
I
D
= 5 A
100
600
5
5