ZXMC10A816N8TC Diodes Inc, ZXMC10A816N8TC Datasheet - Page 3

• Manufacturer Part Number: ZXMC10A816N8TC
• Description: MOSFET DUAL COMPL 100V 8-SOIC
• Manufacturer: Diodes Inc

Specifications of ZXMC10A816N8TC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 497pF @ 50V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC10A816N8DITR

Thermal characteristics
Issue 1.3 - March 2009
© Diodes Incorporated 2009
N-channel Safe Operating Area
100m
10m
100
100
Transient Thermal Impedance
10
80
60
40
20
10
100µ
100µ
1
0
1
0.1
Note (a)(d)
R
Limited
Pulse Power Dissipation
Single Pulse, T
D=0.5
D=0.2
DS(ON)
V
1m
1m
DS
Drain-Source Voltage (V)
DC
10m 100m
10m 100m
Pulse Width (s)
Pulse Width (s)
1
amb
1s
100ms
=25° C
10ms
1
1
Single Pulse
T
amb
1ms
10
=25°C
D=0.1
10
10
D=0.05
Single Pulse
100us
100
100
100
1k
1k
3
100m
P-channel Safe Operating Area
10m
2.0
1.5
1.0
0.5
0.0
10
1
0.1
0
Note (a)(d)
R
Limited
Single Pulse, T
-V
DS(ON)
DS
25
Drain-Source Voltage (V)
Derating Curve
DC
Temperature (° C)
50
1
1s
amb
100ms
=25° C
75
ZXMC10A816N8
10ms
Two active die
100
1ms
One active die
10
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100us
125
150
100