ZXMC10A816N8TC Diodes Inc, ZXMC10A816N8TC Datasheet - Page 8

• Manufacturer Part Number: ZXMC10A816N8TC
• Description: MOSFET DUAL COMPL 100V 8-SOIC
• Manufacturer: Diodes Inc

Specifications of ZXMC10A816N8TC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 497pF @ 50V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC10A816N8DITR

Q2 (P-channel) typical characteristics
Issue 1.3 - March 2009
© Diodes Incorporated 2009
Typical Transfer Characteristics
0.1
0.1
10
10
On-Resistance v Drain Current
1
1
1
3.0
0.1
-V
T = 25°C
0.1
GS
-V
-V
Output Characteristics
DS
GS
T = 150° C
-I
3.5
3.5V
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
1
1
4.0
4V
T = 25° C
10V
4.5V
4.5
T = 25°C
-V
DS
10
5V
= 10V
10
7V
-V
4.5V
3.5V
10V
4V
5V
GS
5.0
8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
10
10
1
1
-50
0.2
T = 150° C
0.1
-V
-V
Tj Junction Temperature (° C)
Output Characteristics
T = 150°C
DS
SD
0.4
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
V
I
D
1
ZXMC10A816N8
GS
0.6
= -250uA
50
= V
V
I
D
GS
= - 2.1A
DS
= -10V
www.diodes.com
T = 25° C
10V
100
0.8
10
R
V
DS(on)
-V
GS(th)
5V
3.5V
4.5V
4V
3V
GS
150
1.0