SI9926BDY-T1-E3 Vishay, SI9926BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9926BDY-T1-E3
• Description: MOSFET DUAL N-CH 20V 6.2A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI9926BDY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 1.14W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.02 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 1140 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Power Dissipation Pd: 2W
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9926BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72278
S-61006-Rev. B, 12-Jun-06
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
0
5
4
3
2
1
0
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
= 8.2 A
2
V
5
0.3
V
GS
= 10 V
SD
Q
T
= 2.5 V
J
g
- Source-to-Drain Voltage (V)
= 150 °C
I
10
D
- Total Gate Charge (nC)
4
Gate Charge
- Drain Current (A)
0.6
15
6
0.9
T
J
= 25 °C
20
8
V
GS
1.2
10
= 4.5 V
25
1.5
12
30
1600
1400
1200
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
= 8.2 A
I
D
V
= 4.5 V
= 3.3 A
4
V
1
DS
T
GS
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
25
Capacitance
oss
8
2
I
D
50
C
Vishay Siliconix
= 8.2 A
iss
Si9926BDY
12
75
3
www.vishay.com
100
16
4
125
150
20
5
3