SI9926BDY-T1-E3 Vishay, SI9926BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9926BDY-T1-E3
• Description: MOSFET DUAL N-CH 20V 6.2A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI9926BDY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 1.14W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.02 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 1140 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Power Dissipation Pd: 2W
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9926BDY-T1-E3TR

Si9926BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
I
D
J
- Temperature (°C)
= 250 µA
10
25
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10
100
1
0.1
-2
r
Limited
DS(on)
I
125
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
A
Limited
V
= 25 °C
150
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
BV
DSS
Limited
10
1
50
40
30
20
10
0.001
0
I
DM
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Limited
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
0.1
DM
JM
Time (sec)
- T
t
A
1
= P
t
2
S-61006-Rev. B, 12-Jun-06
DM
Document Number: 72278
1
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 90 °C/W
100
600
600