SI4904DY-T1-E3 Vishay, SI4904DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4904DY-T1-E3
• Description: MOSFET N-CH DUAL 40V 8A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4904DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 2390pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4904DY-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08