IRF7103TRPBF International Rectifier, IRF7103TRPBF Datasheet
IRF7103TRPBF
Specifications of IRF7103TRPBF
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IRF7103TRPBF Summary of contents
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Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon ...
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IRF7103 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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IRF7103 ...
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IRF7103 ...
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D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit V DS 90% 10 Fig 10b. ...
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IRF7103 Q 10V Charge Fig 12a. Basic Gate Charge Waveform G GD Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig ...
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Peak Diode Recovery dv/dt Test Circuit + D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...
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IRF7103 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...
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Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ...