STS4DPF30L STMicroelectronics, STS4DPF30L Datasheet - Page 3

• Manufacturer Part Number: STS4DPF30L
• Description: MOSFET 2P-CH 30V 4A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS4DPF30L

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3228-2

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 1)
V
(See test circuit, Figure 2)
V
R
(Resistive Load, Figure 1)
I
I
V
(See test circuit, Figure 3)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 4 A
= 4 A
= 24 V I
= 15 V
= 15 V
= 15 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 4 A V
di/dt = 100A/µs
V
T
V
GS
V
j
GS
GS
= 150°C
I
I
GS
D
D
= 0
= 2 A
= 4.5 V
= 2 A
= 4.5 V
= 5 V
Min.
Min.
Min.
Typ.
12.5
Typ.
Typ.
125
1.6
25
35
35
45
36
5
3
STS4DPF30L
Max.
Max.
Max.
1.2
16
16
4
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/6