IRF7301TRPBF International Rectifier, IRF7301TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7301TRPBF
• Description: MOSFET 2N-CH 20V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7301TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13.3 nC
• Continuous Drain Current Id: 5.2A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Drain Source On Resistance @ 2.7v: 70mohm
• Drain Source On Resistance @ 4.5v: 50mohm
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7301PBFTR

1000
100
100
10
10
1
1
1.5
0.1
TOP
BOTTOM 1.5V
2.0
V
V
GS
DS
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
T = 25°C
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
J
2.5
1
3.0
1.5V
T = 150°C
J
V
20µs PULSE WIDTH
3.5
20µs PULSE WIDTH
T = 25°C
DS
J
= 15V
10
4.0
4.5
100
5.0
A
A
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
TOP
BOTTOM 1.5V
I
D
= 4.3A
T , Junction Temperature (°C)
V
J
DS
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
, Drain-to-Source Voltage (V)
0
1
20
40
60
1.5V
20µs PULSE WIDTH
T = 150°C
J
80 100 120 140 160
10
V
GS
= 4.5V
100
A
A