IRF7301TRPBF International Rectifier, IRF7301TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7301TRPBF
• Description: MOSFET 2N-CH 20V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7301TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13.3 nC
• Continuous Drain Current Id: 5.2A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Drain Source On Resistance @ 2.7v: 70mohm
• Drain Source On Resistance @ 4.5v: 50mohm
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7301PBFTR

100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.0001
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
0.01
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.1
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
t
≤ 0.1 %
r
≤ 1
J
DM
x Z
1
thJA
P
2
10
DM
+ T
t
d(off)
A
t
1
t
t
f
2
+
-
100