IRF7316QTRPBF International Rectifier, IRF7316QTRPBF Datasheet

IRF7316QTRPBF

Manufacturer Part Number

IRF7316QTRPBF

Description

MOSFET DUAL P-CH 30V4.9A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF7316QTRPBF.pdf (7 pages)

2.IRF7316TR.pdf (7 pages)

Specifications of IRF7316QTRPBF

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

58 mOhm @ 4.9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.9A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

34nC @ 10V

Input Capacitance (ciss) @ Vds

710pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

P Channel

Continuous Drain Current Id

-4.9A

Drain Source Voltage Vds

-30V

On Resistance Rds(on)

59mohm

Rds(on) Test Voltage Vgs

20V

Threshold Voltage Vgs Typ

-1V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7316QTRPBFCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7316QTRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 7
Download datasheet (216Kb)

Description

These HEXFET

SO-8 package utilize the lastest processing

techniques to achieve extremely low on-

resistance per silicon area. Additional features

of these HEXFET Power MOSFET's are a 150°C

junction operating temperature, fast switching

speed and improved repetitive avalanche rating.

These benefits combine to make this design an

extremely efficient and reliable device for use in

a wide variety of applications.

The efficient SO-8 package provides enhanced

thermal characteristics and dual MOSFET die

capability making it ideal in a variety of power

applications. This dual, surface mount SO-8

can dramatically reduce board space and is also

available in Tape & Reel.

www.irf.com

Advanced Process Technology

Ultra Low On-Resistance

Dual P- Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free

Power MOSFET's in a Dual

…

Top View

SO-8

DS(on)

DSS

Ω

Related parts for IRF7316QTRPBF

IRF7316QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET Dual SO-8 package utilize ...

Page 2

J SM ‚ Ω … www.irf.com Ω ƒ ≤ ≤ ≤ „ ≤ ≤ „ „ „ Ω Ω „ ƒ ƒ ≤ ≤ 2 ...

Page 3

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = ...

Page 4

1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.16 0.12 0.08 0.04 0. www.irf.com 0.6 0.5 0.4 0.3 0.2 0 ...

Page 5

GS 1200 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS 100 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 www.irf.com ...

Page 6

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 7

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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