IRF7307PBF International Rectifier, IRF7307PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7307PBF
• Description: MOSFET N+P 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1500
1000
100
100
0.1
500
0.1
10
10
1
1
0.01
0
1.5
1
TOP
BOTTOM - 1.5V
2.0
-V
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
DS
GS
DS
C
C
C
0.1
T = 25°C
iss
oss
V
C
C
C
rss
, Drain-to-Source Voltage (V)
J
2.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
3.0
gs
ds
gd
+ C
+ C
1
10
3.5
V
20µs PULSE WIDTH
gd
gd
20µs PULSE WIDTH
T = 25°C
f = 1MHz
J
DS
-1.5V
, C
= -15V
T = 150°C
J
ds
4.0
10
SHORTED
4.5
100
5.0
100
A
A
A
100
2.0
1.5
1.0
0.5
0.0
0.1
10
10
1
-60
0.01
8
6
4
2
0
0
I
TOP
BOTTOM - 1.5V
D
I
V
D
-40
DS
= -3.6A
= -2.2A
T , Junction Temperature (°C)
= -16V
-V
-20
J
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
DS
Q , Total Gate Charge (nC)
5
0.1
G
0
, Drain-to-Source Voltage (V)
20
10
40
1
60
20µs PULSE WIDTH
T = 150°C
FOR TEST CIRCUIT
15
J
-1.5V
80
SEE FIGURE 22
100 120 140 160
V
10
GS
20
= -4.5V
100
25
A
A
A