IRF7307PBF International Rectifier, IRF7307PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7307PBF
• Description: MOSFET N+P 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7307PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 660pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
10
5.0
4.0
3.0
2.0
1.0
0.0
1
12V
0.3
25
V
GS
Same Type as D.U.T.
-V
Current Regulator
SD
50
T , Case Temperature
.2µF
0.6
C
, Source-to-Drain Voltage (V)
T = 150°C
J
50KΩ
-3mA
75
Current Sampling Resistors
.3µF
0.9
I
100
T = 25°C
G
J
1.2
( C)
125
D.U.T.
V
°
GS
I
D
= 0V
1.5
150
A
+
-
V
DS
V
90%
10%
V
DS
GS
V
G
100
10
1
Q
1
t
d(on)
GS
T
T
Single Pulse
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
DS
°
≤ 0.1 %
°
≤ 1
t
r
, Drain-to-Source Voltage (V)
Q
Charge
Q
GD
G
BY R
10
DS(on)
1ms
10ms
t
d(off)
t
f
+
-
100