SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1539DL-T1-E3
• Description: MOSFET N/P-CH 30V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1539DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 540mA, 420mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.54 A @ N Channel or 0.42 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 630mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1539DL-T1-E3TR

Document Number: 71250
S-21374—Rev. B, 12-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.2
0.8
0.4
0.0
10
8
6
4
2
0
0.0
0.0
0.0
V
I
D
DS
= 0.59 A
0.5
= 15 V
On-Resistance vs. Drain Current
0.2
0.2
V
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
I
1.0
D
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
0.4
0.4
= 10 thru 4 V
V
GS
1.5
= 4.5 V
0.6
0.6
2.0
V
GS
0.8
0.8
3 V
2.5
= 10 V
3.0
1.0
1.0
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
-50
0.0
0
On-Resistance vs. Junction Temperature
V
I
-25
D
0.5
GS
= 0.59 A
= 10 V
V
C
4
GS
rss
1.0
T
V
0
J
Transfer Characteristics
DS
C
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
oss
- Drain-to-Source Voltage (V)
1.5
25
Capacitance
8
25_C
T
Vishay Siliconix
2.0
C
50
C
= 125_C
iss
12
2.5
75
Si1539DL
N−CHANNEL
100
3.0
16
-55 _C
www.vishay.com
125
3.5
150
4.0
20
2-3