SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet

MOSFET N/P-CH 30V SC70-6

SI1539DL-T1-E3

Manufacturer Part Number
SI1539DL-T1-E3
Description
MOSFET N/P-CH 30V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI1539DL-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 590mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
540mA, 420mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.54 A @ N Channel or 0.42 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
480mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1539DL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1539DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71250
S11-0210-Rev. D, 14-Feb-11
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
P-Channel
V
DS
- 30
30
(V)
Ordering Information: Si1539DL-T1-E3 (Lead (Pb)-free)
1.700 at V
J
a
0.940 at V
0.700 at V
0.480 at V
= 150 °C)
a
Complementary 30 V (G-S) MOSFET
R
DS(on)
G
D
S
GS
GS
GS
1
1
2
a
GS
(Ω)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
1
2
3
Si1539DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
SC-70 (6-LEADS)
Steady State
Steady State
a
T
T
T
T
SOT-363
A
A
A
A
Top View
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
= 25 °C, unless otherwise noted)
I
- 0.45
- 0.33
D
0.63
0.52
(A)
6
5
4
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
D
G
S
I
thJA
thJF
I
DS
GS
D
S
D
2
1
2
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Definition
0.63
0.45
0.25
0.30
0.16
5 s
N-Channel
Typical
360
400
300
30
Marking Code
Steady State
®
RC XX
Power MOSFET
0.54
0.43
0.23
0.27
0.14
Part # Code
- 55 to 150
± 20
1
Lot Traceability
and Date Code
- 0.45
- 0.32
- 0.25
0.30
0.16
5 s
P-Channel
Maximum
Vishay Siliconix
415
460
350
- 30
Steady State
- 0.42
- 0.31
- 0.23
Si1539DL
0.27
0.14
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1539DL-T1-E3

SI1539DL-T1-E3 Summary of contents

Page 1

... V GS 0.940 P-Channel - 30 1.700 Ordering Information: Si1539DL-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si1539DL Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... S11-0210-Rev. D, 14-Feb-11 1.0 0.8 0.6 0 0.2 0.0 2.0 2.5 3 0.6 0.8 1.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.6 0.8 1.0 Si1539DL Vishay Siliconix T = 125 ° °C 25 °C 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics iss oss ...

Page 4

... Si1539DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 150 °C J 0.1 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.4 0 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C J 0.8 1 ...

Page 5

... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71250 S11-0210-Rev. D, 14-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot thru 2.0 2.5 3 0.6 0.8 1.0 Si1539DL Vishay Siliconix - 1 °C C 0.8 25 °C 0.6 0.4 0.2 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 80 60 ...

Page 6

... Si1539DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 0. 0.0 0.2 0 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.6 0.4 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 6 0.6 0.8 1 °C J 0.8 1.0 1 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71250. Document Number: 71250 S11-0210-Rev. D, 14-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1539DL Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 400 ° ...

Page 8

... E 1.80 2.10 E 1.15 1. 0.65BSC e 1.20 1. 0.10 0.20 L 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 Vishay Siliconix Min Nom Max 1.10 0.035 – 0.043 0.10 – – 0.004 1.00 0.031 – 0.039 0.30 0.006 – 0.012 0.25 0.004 – 0.010 2 ...

Page 9

... MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new ...

Page 10

... This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT 518_C/W Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal 413_C/W Performance, AN815, (http://www.vishay.com/doc?71334). Dual EVB 1” Square FR4 PCB - ...

Page 11

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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