SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 3
![MOSFET N/P-CH 30V SC70-6](/photos/5/42/54224/sot-363_pkg_sml.jpg)
SI1539DL-T1-E3
Manufacturer Part Number
SI1539DL-T1-E3
Description
MOSFET N/P-CH 30V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI1539DL-T1-E3.pdf
(8 pages)
2.SI1539DL-T1-E3.pdf
(8 pages)
3.SI1539DL-T1-E3.pdf
(12 pages)
Specifications of SI1539DL-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 590mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
540mA, 420mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.54 A @ N Channel or 0.42 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
480mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1539DL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1539DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71250
S11-0210-Rev. D, 14-Feb-11
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.2
0.8
0.4
0.0
10
8
6
4
2
0
0.0
0.0
0.0
V
I
D
DS
= 0.59 A
0.5
= 15 V
On-Resistance vs. Drain Current
0.2
0.2
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
1.0
- Total Gate Charge (nC)
GS
I
D
Gate Charge
- Drain Current (A)
0.4
0.4
= 10 V thru 4 V
V
GS
1.5
= 4.5 V
0.6
0.6
2.0
V
GS
0.8
0.8
3 V
2.5
= 10 V
3.0
1.0
1.0
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
0.5
D
rss
GS
= 0.59 A
= 10 V
4
V
V
1.0
GS
DS
T
Transfer Characteristics
0
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
1.5
25
Capacitance
8
T
2.0
50
C
C
25 °C
Vishay Siliconix
iss
= 125 °C
12
2.5
75
Si1539DL
100
3.0
www.vishay.com
- 55 °C
16
125
3.5
150
4.0
20
3