SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1539DL-T1-E3
• Description: MOSFET N/P-CH 30V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1539DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 540mA, 420mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.54 A @ N Channel or 0.42 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 630mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1539DL-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71250
S11-0210-Rev. D, 14-Feb-11
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
0.0
0.0
2
1
10
-4
0.02
V
0.05
Duty Cycle = 0.5
0.2
0.1
GS
0.5
On-Resistance vs. Drain Current
Single Pulse
= 4.5 V
0.2
V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
0.4
2 V
1.5
10
-3
V
GS
0.6
Normalized Thermal Transient Impedance, Junction-to-Foot
= 10 V thru 5 V
2.0
V
GS
4 V
3 V
0.8
= 10 V
2.5
Square Wave Pulse Duration (s)
10
1.0
3.0
-2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
10
0
0
-1
C
C
rss
oss
1
4
V
V
DS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
2
Capacitance
8
1
C
iss
Vishay Siliconix
12
3
T
C
25 °C
Si1539DL
= - 55 °C
www.vishay.com
16
4
125 °C
1
0
20
5
5