SI1029X-T1-E3 Vishay, SI1029X-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI1029X-T1-E3
• Description: MOSFET N/P-CH COMPL 60V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1029X-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA, 190mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1029X-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.012
0.020
(0.300)
(0.500)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72605
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Revision: 21-Jan-08
21