SI3585DV-T1-E3 Vishay, SI3585DV-T1-E3 Datasheet
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SI3585DV-T1-E3
Specifications of SI3585DV-T1-E3
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SI3585DV-T1-E3 Summary of contents
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... GS TSOP-6 Top View 2.85 mm Ordering Information: Si3585DV-T1-E3 (Lead (Pb)-free) Si3585DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si3585DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71184 S09-2275-Rev. D, 02-Nov- 1.5 2.0 2.5 Si3585DV Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 300 250 C iss 200 150 ...
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... Si3585DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71184 S09-2275-Rev. D, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3585DV Vishay Siliconix - ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 450 360 C iss ...
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... Si3585DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 2 3.6 2.7 1.8 0.9 0.0 0.0 0.6 1 Total Gate Charge (nC) g Gate Charge 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0.2 0.0 - 0.2 - 0.4 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71184. Document Number: 71184 S09-2275-Rev. D, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3585DV Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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