SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3552DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.8 A @ P Channel
• Power Dissipation: 1150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 360mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3552DV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 1.8 A
1
= 15 V
On-Resistance vs. Drain Current
1
V
V
GS
DS
1
Q
Output Characteristics
= 4.5 V
2
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
V
2
GS
3
2 V
= 10 V thru 5 V
2
4
3
V
4 V
GS
5
3
3 V
= 10 V
4
6
5
4
7
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
10
0
8
6
4
2
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
= 2.5 A
5
1
V
= 10 V
V
T
DS
C
J
GS
Transfer Characteristics
0
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
2
25
Capacitance
C
iss
15
50
3
Vishay Siliconix
T
25 °C
C
= - 55 °C
75
Si3552DV
20
4
www.vishay.com
100
125 °C
25
5
125
150
30
6
3