SI3588DV-T1-E3 Vishay, SI3588DV-T1-E3 Datasheet
SI3588DV-T1-E3
Specifications of SI3588DV-T1-E3
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SI3588DV-T1-E3 Summary of contents
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... 1. 25_C 1. 70_C 0. stg Symbol sec R thJA Steady State Steady State R thJF Si3588DV Vishay Siliconix P-Channel MOSFET P-Channel Steady State 5 secs Steady State 20 –20 "8 2.5 –2.2 –0.57 2.0 –1.8 –1.5 "8 0.75 –1.05 –0.75 0.83 1.15 0.083 0.53 0.73 0.53 – ...
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... Si3588DV Vishay Siliconix _ Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... Gate Charge 3 – Total Gate Charge (nC) g Document Number: 71332 S-02383—Rev. A, 23-Oct-00 New Product Si3588DV Vishay Siliconix Transfer Characteristics –55_C C 25_C 0.0 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Capacitance 600 500 400 C iss 300 200 C oss 100 C rss ...
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... Si3588DV Vishay Siliconix Source-Drain Diode Forward Voltage 150_C J 1 0.1 0.00 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 = 250 0.1 –0.0 –0.1 –0.2 –0.3 –0.4 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... I – Drain Current (A) D Document Number: 71332 S-02383—Rev. A, 23-Oct-00 New Product _ Normalized Thermal Transient Impedance, Junction-to-Foot –3 –2 10 Square Wave Pulse Duration (sec 1 4 Si3588DV Vishay Siliconix – Transfer Characteristics –55_C C 8 25_C 6 125_C 0.0 0.5 1.0 1.5 2.0 2.5 V – ...
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... Si3588DV Vishay Siliconix Gate Charge 2 – Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.1 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.3 0.2 = 250 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J www.vishay.com 6 New Product ...
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... Document Number: 71332 S-02383—Rev. A, 23-Oct-00 New Product _ Normalized Thermal Transient Impedance, Junction-to-Ambient –2 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) Si3588DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 130_C/W ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...