SI3588DV-T1-E3 Vishay, SI3588DV-T1-E3 Datasheet
SI3588DV-T1-E3
Specifications of SI3588DV-T1-E3
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SI3588DV-T1-E3 Summary of contents
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... GS TSOP-6 Top View 2.85 mm Ordering Information: Si3588DV-T1-E3 (Lead (Pb)-free) Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si3588DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Drain Current (A) D On-Resistance vs. Drain Current 3 Total Gate Charge (nC) g Gate Charge Document Number: 71332 S09-2275-Rev. B, 02-Nov- Si3588DV Vishay Siliconix ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 600 500 400 C iss 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si3588DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.1 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...
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... On-Resistance vs. Drain Current Document Number: 71332 S09-2275-Rev. B, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 1 600 500 400 300 200 100 6 8 Si3588DV Vishay Siliconix ° °C 6 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C ...
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... Si3588DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Total Gate Charge (nC) g Gate Charge 150 ° 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com ° ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71332. Document Number: 71332 S09-2275-Rev. B, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3588DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 130 °C/W ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...