SI9945AEY-T1 Vishay, SI9945AEY-T1 Datasheet

SI9945AEY-T1

Manufacturer Part Number

SI9945AEY-T1

Description

MOSFET DUAL P-CH 8-SOIC

Manufacturer

Vishay

Series

TrenchFET®r

Datasheet

1.SI9945AEY-T1.pdf (5 pages)

Specifications of SI9945AEY-T1

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

80 mOhm @ 3.7A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

3.7A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Power - Max

2.4W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

Q4552539A

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI9945AEY-T1

Manufacturer:

INFINEON

Quantity:

184

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI9945AEY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI9945AEY-T1-E3

Quantity:

Company:

H&T Electronics

Part Number:

SI9945AEY-T1-E3

Quantity:

70 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI9945AEY-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70758

S-61010-Rev. D, 12-Jun-06

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

(V)

Ordering Information:

Si9945AEY-T1

SQ9945AEY-T1 (Automotive AECQ101 Qualified)

For lead (Pb)-free, add -E3 to ordering number

0.100 at V

Top View

0.080 at V

SO-8

Dual N-Channel 60-V (D-S), 175 °C MOSFET

DS(on)

= 175 °C)

(Ω)

= 4.5 V

= 10 V

± 3.7

± 3.4

= 25 °C, unless otherwise noted

Steady State

(A)

t ≤ 10 sec

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

• TrenchFET

• Maximum Junction Temperature:

Symbol

175 °C Rated

, T

thJA

N-Channel MOSFET

stg

Si9945AEY/SQ9945AEY

Power MOSFETs

Typ

- 55 to 175

Limit

± 3.7

± 3.2

± 20

2.4

1.7

Max

62.5

Vishay Siliconix

N-Channel MOSFET

www.vishay.com

°C/W

Unit

RoHS*

COMPLIANT

°C

Available

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