SI9945AEY-T1 Vishay, SI9945AEY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI9945AEY-T1
• Description: MOSFET DUAL P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9945AEY-T1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q4552539A

Si9945AEY/SQ9945AEY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
V
I
DS
D
DS
≅ 1 A, V
I
F
= 30 V, V
= 60 V, V
V
V
V
V
V
V
V
V
= 2.0 A, di/dt = 100 A/µs
DS
I
DS
GS
S
DD
DS
DS
GS
DS
Test Conditions
= 2.0 A, V
= 0 V, V
= V
= 4.5 V, I
= 60 V, V
= 30 V, R
≥ 5 V, V
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 10 V, I
= 0 V, T
GS
D
GS
D
D
GS
D
GS
= 250 µA
L
= ± 20 V
= 3.7 A
= 3.7 A
= 3.4 A
= 10 V
= 30 Ω
= 0 V
= 0 V
J
D
G
= 55 °C
= 3.7 A
= 6 Ω
Min
1.0
20
0.075
0.06
Typ
11
11
10
21
45
2
2
9
8
S-61010-Rev. D, 12-Jun-06
Document Number: 70758
± 100
0.080
0.100
Max
1.2
10
20
20
20
40
20
80
3
1
Unit
nA
µA
nC
ns
Ω
V
A
S
V