TT8M2TR Rohm Semiconductor, TT8M2TR Datasheet - Page 2

• Manufacturer Part Number: TT8M2TR
• Description: MOSFET N/P-CH 30V 2.5A TSST8
• Manufacturer: Rohm Semiconductor

Specifications of TT8M2TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<Tr2 : Pch>
∗ 1 Pw ≤ 10µs, Duty cycle ≤ 1%
<Tr1 AND Tr2>
∗
< Characteristics for the Tr1( Nch ).>
∗Pulsed
○
TT8M2
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗Pulsed
2 Mounted on a ceramic board
Forward voltage
c
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
www.rohm.com
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
gs
gd
fs
f
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
0.5
2.2
Symbol
Symbol
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
Typ.
Typ.
180
3.2
0.9
0.4
65
70
95
60
35
30
20
20
∗ 1
∗ 1
−
−
−
−
−
7
−
∗ 2
−55 to +150
Max.
Max.
±10
130
1.2
1.5
90
95
−
1
−
−
−
−
−
−
−
−
−
−
−
Limits
Limits
±2.5
−0.8
1.25
−20
±10
−10
150
±10
1.0
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
R
V
D
D
D
D
D
S
2/8
GS
DS
DS
DS
DS
GS
GS
GS
DD
L
G
L
= 2.5A, V
=1mA, V
=2.5A, V
=2.5A, V
=2.5A, V
=1.2A
DD
=10Ω
=±12V, V
=30V, V
=10V, I
=10V, I
=10V
=0V
=4.5V
=4.5V
W / ELEMENT
12.5Ω
6Ω, R
15V, I
15 V
W / TOTAL
Unit
Unit
°C
°C
V
V
A
A
A
A
Conditions
Conditions
GS
GS
GS
GS
D
D
G
GS
GS
D
=10Ω
=1mA
=2.5A
=0V
=4.5V
=4V
=2.5V
=2.5A
=0V
DS
=0V
=0V
2009.06 - Rev.A
Data Sheet