RB161L-40 Rohm Semiconductor, RB161L-40 Datasheet
RB161L-40
Manufacturer Part Number
RB161L-40
Description
Manufacturer
Rohm Semiconductor
Datasheet
1.RB161L-40.pdf
(2 pages)
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IXYS
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Diodes
Schottky barrier diode
RB161L-40
High frequency rectification
For switching power supply
1) Compact power mold type. (PMDS)
2) Ultra low V
3) V
Silicon epitaxial planar
Forward voltage
Reverse current
Applications
Features
Construction
Absolute maximum ratings (Ta=25 C)
Electrical characteristics (Ta=25 C)
When mounting on PCB
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
RM
=40V guaranteed.
Parameter
Parameter
F
.( V
F
=0.35V Typ. at 1A)
Symbol
Symbol
V
I
R
Tstg
V
F
I
V
FSM
Tj
I
RM
O
R
Min.
Limits
40
125
40
20
70
1
125
Typ.
Max.
0.40
Unit
1
˚C
˚C
V
V
A
A
CATHODE MARK
ROHM : PMDS
EIAJ :
JEDEC : SOD-106
External dimensions (Units : mm)
Unit
mA
V
1.5±0.2
2.6±0.2
3
I
V
F
=1.0A
R
=20V
3
Conditions
Date of manufacture EX. 1999.12
2.0±0.2
RB161L-40
0.1
+0.02
0.1
9, C
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RB161L-40 Summary of contents
Page 1
... Forward voltage V F Reverse current I R External dimensions (Units : mm) 1.5±0.2 CATHODE MARK 3 2.6±0.2 ROHM : PMDS EIAJ : JEDEC : SOD-106 Limits Unit 125 ˚C 40 125 ˚C Min. Typ. Max. Unit 0. RB161L-40 3 +0.02 0.1 0.1 2.0±0.2 Date of manufacture EX. 1999. Conditions =1.0A =20V R ...
Page 2
... V R 0.40 Tj=Tj Max 0.3 0. 0.5 = Tj=Tj Max. D= 0.20 sine 0. REVERSE VOLTAGE : Fig.5 Reverse power dissipation characteristics RB161L-40 1n 100p 10p REVERSE VOLTAGE : Fig.3 Capacitance between terminals characteristics 2 1 D=0 D=0.5 sine 1.0 D=0.3 D=0.2 D=0.1 0.5 D=0. ...