RB161L-40TE25 Rohm Semiconductor, RB161L-40TE25 Datasheet

DIODE SCHOTTKY 20V 1A SOD106

RB161L-40TE25

Manufacturer Part Number
RB161L-40TE25
Description
DIODE SCHOTTKY 20V 1A SOD106
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RB161L-40TE25

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
400mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 20V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
400mV
Forward Surge Current Ifsm Max
70A
Operating Temperature Range
-40°C To +125°C
Diode Case
RoHS Compliant
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
70 A
Configuration
Single
Forward Voltage Drop
0.4 V
Maximum Reverse Leakage Current
1 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB161L-40TE25TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB161L-40TE25
Manufacturer:
IXYS
Quantity:
670
Part Number:
RB161L-40TE25
Manufacturer:
ROHM
Quantity:
99 000
Part Number:
RB161L-40TE25
Manufacturer:
ROHM
Quantity:
38 642
Diodes
Schottky barrier diode
RB161L-40
General rectification
1) Small power mold type. (PMDS)
2) Low V
3) High reliability.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperautre
Storage tempereature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
F
.
Parameter
Parameter
ROHM : PMDS
JEDEC : SOD-106
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
2.6±0.2
1.5±0.2
3
Symbol
Tstg
V
I
3
V
FSM
Io
Tj
2.9±0.1
Symbol
RM
R
V
I
R
F
4.0±0.1
Manufacture Date
2.0±0.05
Min.
-40 to +125
-
-
4.0±0.1
Limits
2.0±0.2
125
40
20
70
1
Typ.
0.1±0.02
    0.1
-
-
Max.
0.40
1
φ1.55±0.05
Unit
V
V
A
A
φ1.55
Land size figure (Unit : mm)
Structure
Unit
mA
V
PMDS
I
V
F
R
=1.0A
=20V
2.0
Rev.H
RB161L-40
Conditions
0.3
2.8MAX
1/3

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RB161L-40TE25 Summary of contents

Page 1

... Limits Symbol FSM Tj 125 -40 to +125 Tstg Symbol Min. Typ RB161L-40 Land size figure (Unit : mm) 2.0 PMDS Structure 0.3 φ1.55±0.05 φ1.55 2.8MAX Unit ℃ ℃ Conditions Max. Unit 0. =1. =20V Rev.H 1/3 ...

Page 2

... DISPERSION MAP 1000 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=100mA IF=0.5A 1 1ms time 300us 0.1 100 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB161L-40 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 300 Ta=25℃ 290 f=1MHz 280 VR=0V n=10pcs 270 260 250 240 AVE:251 ...

Page 3

... ESD DISPERSION MAP 3 D=t/T 2.0 VR=20V DC Tj=125℃ T 1.5 D=1/2 1.0 0.5 Sin(θ=180) 0 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB161L- 2 1.5 D=1/2 1 0.5 Sin(θ=180 100 125 CASE TEMPARATURE:0T(℃) Derating Curve゙(Io-Tc) Rev.H ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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