RB051L-40 Rohm Semiconductor, RB051L-40 Datasheet

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RB051L-40

Manufacturer Part Number
RB051L-40
Description
Manufacturer
Rohm Semiconductor
Datasheet

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Diodes
Schottky barrier diode
RB051L-40
High frequency rectification
For switching power supply
1) Compact power mold type. (PMDS)
2) Ultra low V
3) V
Silicon epitaxial planar
T
(82
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
(60Hz
Junction temperature
Storage temperature
Features
Construction
Electrical characteristics (Ta = 25 C)
Forward voltage
Reverse current
Applications
Absolute maximum ratings (Ta = 25 C)
L
90 C Max. 180 half sine wave when mounted on an alumina substrate
RM
30
=40V guaranteed.
·
1
Parameter
1.0 mm)
Parameter
)
F
. (V
F
=0.29V Typ. at 1A)
Symbol
Tstg
V
I
Symbol
V
FSM
Tj
I
RM
O
R
V
V
I
I
R
R
F
F
1
2
1
2
40 ~ 125
Limits
125
3.0
40
20
70
Typ.
Unit
V
V
A
A
C
C
CATHODE MARK
ROHM : PMDS
EIAJ :
JEDEC : SOD-106
External dimensions (Units : mm)
Max.
0.35
0.45
150
1.0
1.5 0.2
2.6 0.2
3
1
Unit
mA
V
V
A
, ·····
Date of manufacture EX. 1999.12 9, C
I
I
V
V
F
F
R
R
1.0A
3.0A
20V
15V
2.0 0.2
Conditions
RB051L-40
0.1
0.02
0.1

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RB051L-40 Summary of contents

Page 1

... External dimensions (Units : mm) CATHODE MARK ROHM : PMDS EIAJ : JEDEC : SOD-106 Limits Unit 3 125 125 C Typ. Max. 1 0.35 2 0.45 1.0 150 RB051L-40 1.5 0 0.02 0.1 0.1 2.0 0.2 2.6 0.2 , ····· Date of manufacture EX. 1999. Unit Conditions 20V ...

Page 2

... D 0 sine 3.0 D 0.3 D 0.2 2.0 D 0.1 D 0.05 1 100 125 AMBIENT TEMPERATURE : Fig. 8 Derating curve (when mounted on a glass epoxy PCBs board) RB051L-40 1000 100 REVERSE VOLTAGE : V (V) R Fig. 3 Capacitance between terminals characteristics 1 0.8 1.2 D 0.5 sine 1.0 D 0.3 D 0.2 0 ...

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