IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 10
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IRF7338TRPBF
Manufacturer Part Number
IRF7338TRPBF
Description
MOSFET N/P-CH 12V 6.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7338TRPBF.pdf
(12 pages)
Specifications of IRF7338TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
8.6nC @ 4.5V
Vgs(th) (max) @ Id
1.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
6.3A, 3A
Drain To Source Voltage (vdss)
12V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 6A, 4.5V
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
34 mOhms
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
6.3 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
5.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7338TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7338
10
3.0
2.4
1.8
1.2
0.6
0.0
Fig 28a. Basic Gate Charge Waveform
V
25
G
Fig 26. Maximum Drain Current Vs.
Q
GS
50
T , Case Temperature
C
Case Temperature
75
Q
Charge
Q
GD
G
100
( C)
125
°
150
Fig 28b. Gate Charge Test Circuit
Fig 27a. Switching Time Test Circuit
Fig 27b. Switching Time Waveforms
V
10%
90%
V
12V
GS
DS
V
GS
Same Type as D.U.T.
Current Regulator
t
d(on)
.2µF
50KΩ
-3mA
≤ 0.1 %
≤ 1
t
r
Current Sampling Resistors
.3µF
I
G
D.U.T.
t
I
d(off)
D
www.irf.com
t
+
f
-
V
DS
+
-