IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 10

• Manufacturer Part Number: IRF7338TRPBF
• Description: MOSFET N/P-CH 12V 6.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7338
10
3.0
2.4
1.8
1.2
0.6
0.0
Fig 28a. Basic Gate Charge Waveform
V
25
G
Fig 26. Maximum Drain Current Vs.
Q
GS
50
T , Case Temperature
C
Case Temperature
75
Q
Charge
Q
GD
G
100
( C)
125
°
150
Fig 28b. Gate Charge Test Circuit
Fig 27a. Switching Time Test Circuit
Fig 27b. Switching Time Waveforms
V
10%
90%
V
12V
GS
DS
V
GS
Same Type as D.U.T.
Current Regulator
t
d(on)
.2µF
50KΩ
-3mA
≤ 0.1 %
≤ 1
t
r
Current Sampling Resistors
.3µF
I
G
D.U.T.
t
I
d(off)
D
www.irf.com
t
+
f
-
V
DS
+
-