IRF7338TRPBF International Rectifier, IRF7338TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7338TRPBF
• Description: MOSFET N/P-CH 12V 6.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 5.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7338
4
0.05
0.04
0.03
0.02
2.0
1.5
1.0
0.5
0.0
3.0
-60
I
D
=
-40
6.3A
V GS, Gate -to -Source Voltage (V)
-20
T , Junction Temperature
4.0
J
0
20
5.0
40
60
I D = 6.3A
6.0
80
100
( C)
V
7.0
°
120
GS
=
140
4.5V
160
8.0
80
60
40
20
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
0.00
0
0.00
5
V GS = 3.0V
0.00
I D , Drain Current (A)
Typical Power Vs. Time
10
Time (sec)
0.01
15
V GS = 4.5V
0.10
20
www.irf.com
1.00
25
10.00
30