IRF8915PBF International Rectifier, IRF8915PBF Datasheet - Page 6

• Manufacturer Part Number: IRF8915PBF
• Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8915PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 27 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 3.6 ns
• Gate Charge Qg: 4.9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
R G
20V
VGS
Fig 14. Unclamped Inductive Test Circuit
V DS
Fig 12. On-Resistance vs. Gate Voltage
40
35
30
25
20
15
10
Fig 16. Switching Time Test Circuit
t p
1
I AS
D.U.T
0.01 Ω
L
2
V GS, Gate -to -Source Voltage (V)
Duty Factor < 0.1%
Pulse Width < 1µs
T J = 25°C
V
3
GS
and Waveform
15V
4
DRIVER
V
DS
+
- V DD
5
A
I
6
AS
D.U.T
7
L
D
T J = 125°C
V
I D = 8.9A
DD
8
+
t p
-
9
10
V
(BR)DSS
90%
V
10%
V
DS
Fig 17. Switching Time Waveforms
60
50
40
30
20
10
GS
0
25
Fig 13. Maximum Avalanche Energy
Fig 15. Gate Charge Test Circuit
t
12V
Starting T J , Junction Temperature (°C)
d(on)
V
GS
Same Type as D.U.T.
50
Current Regulator
.2µF
t
vs. Drain Current
r
50KΩ
3mA
Current Sampling Resistors
75
.3µF
I
G
t
d(off)
100
D.U.T.
TOP
BOTTOM 7.1A
www.irf.com
I
D
t
f
125
+
-
V
DS
I D
2.4A
2.9A
150