IRF8915PBF International Rectifier, IRF8915PBF Datasheet - Page 7
![MOSFET 2N-CH 20V 8.9A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF8915PBF
Manufacturer Part Number
IRF8915PBF
Description
MOSFET 2N-CH 20V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF8915TRPBF.pdf
(10 pages)
Specifications of IRF8915PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.3 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
540pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
27 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.9 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
3.6 ns
Gate Charge Qg
4.9 nC
Minimum Operating Temperature
- 55 C
Rise Time
12 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF8915PBF
Manufacturer:
CYPRESS
Quantity:
24 970
Part Number:
IRF8915PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
+
R
-
D.U.T
Fig 15.
+
-
•
•
•
•
SD
Vgs(th)
•
•
•
Qgs1 Qgs2
Vds
-
G
Fig 16. Gate Charge Waveform
HEXFET
+
V
Qgd
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7