IRF9956PBF International Rectifier, IRF9956PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9956PBF
• Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9956PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
3.5
V
GS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
DS
T = 25°C
J
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 150°C
J
4.5
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
= 10V
5.0
3.0V
5.5
6.0
10
A
A
100
100
0.1
10
10
1
1
0.1
0.4
TOP
BOTTOM 3.0V
T = 150°C
V
J
V
DS
15V
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
SD
0.6
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.8
T = 25°C
1
J
20µs PULSE WIDTH
T = 150°C
J
1.0
3.0V
1.2
V
GS
= 0V
10
1.4
A
A