IRF9956PBF International Rectifier, IRF9956PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9956PBF
• Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9956PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
I =
D
V
2.2A
GS
T , Junction Temperature ( C)
3
J
, Gate-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
6
9
I
D
= 3.5A
V
°
12
GS
=
10V
15
A
100
0.12
0.10
0.08
0.06
0.04
80
60
40
20
0
25
0
Starting T , Junction Temperature (°C)
2
50
I , Drain Current (A)
J
V
D
GS
4
75
= 4.5V
6
V
GS
100
= 10V
TOP
BOTTOM
8
125
10
1.6A
0.89A
2.0A
I
D
150
12
A
A