IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 6
IRF7902TRPBF
Manufacturer Part Number
IRF7902TRPBF
Description
MOSFET DUAL N-CH 30V 9.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7902TRPBF.pdf
(10 pages)
Specifications of IRF7902TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
1.4W, 2W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
6.9nC @ 4.5V
Vgs(th) (max) @ Id
2.25V @ 25µA
Current - Continuous Drain (id) @ 25° C
6.4A, 9.7A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22.6 mOhm @ 6.4A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
18.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.7 A
Power Dissipation
2.0 W
Mounting Style
SMD/SMT
Gate Charge Qg
4.6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7902TRPBF
Manufacturer:
IR
Quantity:
20 000
Fig 19. Maximum Drain Current vs. Ambient Temperature
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
Fig 21. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
14
12
10
7
6
5
4
3
2
1
0
8
6
4
2
0
-75 -50 -25
25
25
Starting T J , Junction Temperature (°C)
T A , Ambient Temperature (°C)
50
50
T J , Temperature ( °C )
Q1 - Control FET
I D = 250µA
0
75
75
25
50
100
100
TOP
BOTTOM 6.4A
75 100 125 150
125
125
I D
2.4A
2.0A
Typical Characteristics
150
150
Fig 24. Maximum Avalanche Energy vs. Drain Current
Fig 20. Maximum Drain Current vs. Ambient Temperature
Fig 22. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
30
25
20
15
10
10
5
0
8
6
4
2
0
-75 -50 -25
25
25
Starting T J , Junction Temperature (°C)
T A , Ambient Temperature (°C)
50
50
T J , Temperature ( °C )
Q2 - Synchronous FET
I D = 250µA
0
75
75
25
50
100
100
TOP
BOTTOM 7.8A
75 100 125 150
125
125
www.irf.com
I D
2.4A
2.8A
150
150