IRF7324TRPBF International Rectifier, IRF7324TRPBF Datasheet - Page 2
![MOSFET 2P-CH 20V 9A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7324TRPBF
Manufacturer Part Number
IRF7324TRPBF
Description
MOSFET 2P-CH 20V 9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7324TRPBF.pdf
(8 pages)
Specifications of IRF7324TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 5V
Input Capacitance (ciss) @ Vds
2940pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
–9 A
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
0.018 Ohm
Resistance, Thermal, Junction To Case
62.5 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 9 A
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7324PBFTR
IRF7324TRPBF
IRF7324TRPBFTR
IRF7324TRPBF
IRF7324TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7324TRPBF
Manufacturer:
International Rectifier
Quantity:
30 807
Part Number:
IRF7324TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7324PbF
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
DSS
2
fs
SD
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Surface mounted on FR-4 board, ≤ 10sec
Pulse width ≤ 300µs duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
––– -0.02 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2940 –––
–––
–––
-20
19
–––
180
300
–––
––– 0.018
––– 0.026
–––
–––
–––
––– -100
–––
170
190
630
420
7.1
42
12
17
36
-1.2
450
270
-1.0
-1.0
–––
–––
100
–––
–––
–––
–––
–––
–––
-71
-25
63
11
18
2.0
V/°C
nC
nC
ns
pF
V
V
Ω
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -9.0A
= -1.0A
= 25°C, I
= 25°C, I
= 10Ω
= 6.0Ω
= V
= -10V, I
= -16V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.5V, I
= -12V
= 12V
= -5.0V
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -2.0A, V
= -2.0A
D
D
GS
GS
= -250µA
= -9.0A
= -9.0A
= -7.7A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 125°C
= 0V
S
D