IRF7324TRPBF International Rectifier, IRF7324TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7324TRPBF
• Description: MOSFET 2P-CH 20V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7324TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 5V
• Input Capacitance (ciss) @ Vds: 2940pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: –9 A
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 0.018 Ohm
• Resistance, Thermal, Junction To Case: 62.5 °C/W
• Temperature, Operating, Minimum: -55 °C
• Voltage, Drain To Source: –20 V
• Voltage, Gate To Source: ±12 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7324PBFTR; IRF7324TRPBF; IRF7324TRPBFTR

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10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
d(on)
J
IRF7324PbF
≤ 0.1 %
≤ 1
t
r
DM
x Z
1
thJA
P
2
DM
1
+ T
t
A
t
d(off)
1
t
2
t
f
+
-
5
10