IRF7325PBF International Rectifier, IRF7325PBF Datasheet

MOSFET 2P-CH 12V 7.8A 8-SOIC

IRF7325PBF

Manufacturer Part Number
IRF7325PBF
Description
MOSFET 2P-CH 12V 7.8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7325PBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
2020pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
24 m Ohms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 7.8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
180 ns
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Rise Time
9.8 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
New P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
www.irf.com
Symbol
R
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJL
θJA
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
@ T
@ T
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
device
Junction-to-Drain Lead
Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
design that HEXFET Power
®
power MOSFETs from
Parameter
Parameter
ƒ
ƒ
ƒ
GS
GS
@ -4.5V
@ -4.5V
G2
G1
S2
S1
V
-12V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
HEXFET
8
7
6
5
IRF7325PbF
DS(on)
-55 to + 150
24@V
33@V
49@V
Max.
± 8.0
-7.8
-6.2
-12
-39
2.0
1.3
D1
D1
D2
D2
16
GS
GS
GS
max (mW)
®
= -4.5V
= -2.5V
= -1.8V
Power MOSFET
Max.
62.5
20
SO-8
±
±
±
mW/°C
7.8A
6.2A
3.9A
Units
Units
I
°C/W
W
D
°C
V
A
V
1
10/4/04

Related parts for IRF7325PBF

IRF7325PBF Summary of contents

Page 1

... J, STG Thermal Resistance Symbol Parameter R Junction-to-Drain Lead θJL R Junction-to-Ambient θJA www.irf.com V DSS -12V Top View @ -4. -4.5V GS ƒ ƒ Typ. ƒ IRF7325PbF ® HEXFET Power MOSFET R max (mW) I DS(on) D 24@V = -4.5V 7.8A ± GS 33@V = -2.5V 6.2A ± GS 49@V = -1.8V 3.9A ± SO-8 Max ...

Page 2

... IRF7325PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 10 1 ° 0.1 10 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -10V 0.0 2.5 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7325PbF VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V -1.2V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -7. ...

Page 4

... IRF7325PbF 3000 0V MHZ C iss = rss = C gd 2500 C oss = Ciss 2000 1500 1000 Coss 500 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° ° 0.1 0.2 0.6 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage -7.8A D SHORTED ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R V Fig 10a. Switching Time Test Circuit 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7325PbF D.U. ≤ 1 ≤ 0 d(on) r d(off ...

Page 6

... IRF7325PbF 0.05 0.04 0. -7.8A 0.02 0.01 0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.08 0.06 0.04 0.02 0 2.0 4.0 8.0 10 Drain Current (A) Fig 13. Typical On-Resistance Vs. Current Regulator Same Type as D.U.T. ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 100 -250µ 100 125 150 0.001 IRF7325PbF 0.010 0.100 1.000 10.000 100.000 Time (sec) Typical Power Vs. Time 7 ...

Page 8

... IRF7325PbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.10/04 IRF7325PbF 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12 ...

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