NTJD5121NT1G ON Semiconductor, NTJD5121NT1G Datasheet

MOSFET N-CH DUAL 60V SOT-363

NTJD5121NT1G

Manufacturer Part Number
NTJD5121NT1G
Description
MOSFET N-CH DUAL 60V SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTJD5121NT1G

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
295mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
26pF @ 20V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0016 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.295 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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NTJD5121N
Power MOSFET
60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 2
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Gate−Source ESD Rating
(HBM, Method 3015)
Junction−to−Ambient – Steady State
Junction−to−Ambient – t ≤ 5 s
(Note 1)
Low R
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
This is a Pb−Free Device
Low Side Load Switch
DC−DC Converters (Buck and Boost Circuits)
(Cu area = 1.127 in sq [2 oz] including traces).
DS(on)
Parameter
Parameter
(T
Steady
Steady
J
t ≤ 5 s
t ≤ 5 s
State
State
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
T
T
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
T
Symbol
Symbol
J
V
R
R
ESD
V
, T
I
P
T
DSS
DM
I
I
qJA
qJA
GS
D
S
D
L
STG
−55 to
Value
Value
1400
±20
295
212
304
219
250
266
900
150
210
260
500
470
60
1
Units
Units
°C/W
mW
mA
mA
mA
°
°C
V
V
V
C
†For information on tape and reel specifications,
NTJD5121NT1G
NTJD5121NT2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
SC−88/SOT−363
(BR)DSS
60 V
Device
CASE 419B
(Note: Microdot may be in either location)
G
D
S
STYLE 26
1
1
2
ORDERING INFORMATION
TF
M
G
1
1
2
3
http://onsemi.com
http://onsemi.com
SC−88 (SOT−363)
2.5 W @ 4.5 V
1.6 W @ 10 V
R
DS(on)
(Pb−Free)
(Pb−Free)
Package
= Device Code
= Date Code
= Pb−Free Package
Top View
SC−88
SC−88
MARKING DIAGRAM &
PIN ASSIGNMENT
Publication Order Number:
MAX
6
1
D1 G2 S2
S1 G1 D2
TF M G
3000 / Tape & Reel
3000 / Tape & Reel
G
6
5
4
Shipping
NTJD5121N/D
295 mA
I
D
Max
D
G
S
2
1
2

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NTJD5121NT1G Summary of contents

Page 1

... CASE 419B I 210 mA S 260 ° ESD 1400 V (Note: Microdot may be in either location) Device NTJD5121NT1G Symbol Value Units R 500 °C/W qJA NTJD5121NT2G R 470 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND ...

Page 3

TYPICAL PERFORMANCE CURVES 1 4.5 V 1.2 4.2 V 2.4 V 0.8 2 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 2 125°C ...

Page 4

TYPICAL PERFORMANCE CURVES iss oss C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.1 0.01 0.4 Figure 9. Diode Forward Voltage vs. Current (T = ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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