NTJD5121NT1G ON Semiconductor, NTJD5121NT1G Datasheet
NTJD5121NT1G
Specifications of NTJD5121NT1G
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NTJD5121NT1G Summary of contents
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... CASE 419B I 210 mA S 260 ° ESD 1400 V (Note: Microdot may be in either location) Device NTJD5121NT1G Symbol Value Units R 500 °C/W qJA NTJD5121NT2G R 470 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND ...
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TYPICAL PERFORMANCE CURVES 1 4.5 V 1.2 4.2 V 2.4 V 0.8 2 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 2 125°C ...
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TYPICAL PERFORMANCE CURVES iss oss C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.1 0.01 0.4 Figure 9. Diode Forward Voltage vs. Current (T = ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...