NTJD5121NT1G ON Semiconductor, NTJD5121NT1G Datasheet - Page 2

• Manufacturer Part Number: NTJD5121NT1G
• Description: MOSFET N-CH DUAL 60V SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD5121NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 295mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 26pF @ 20V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.295 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Parameter
V
(T
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
J
(BR)DSS
C
C
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
DS(on)
V
= 25°C unless otherwise stated)
g
d(on)
d(off)
DSS
GSS
G(TH)
OSS
RSS
FS
ISS
t
t
SD
GS
GD
r
f
/T
/T
J
J
http://onsemi.com
I
V
V
S
V
V
V
V
V
V
I
I
V
V
V
V
DS
D
D
GS
GS
GS
GS
GS
GS
= 200 mA
GS
DS
GS
DS
GS
= 200 mA, R
= 250 mA, ref to 25°C
= 60 V
= 0 V,
= 4.5 V, V
Test Condition
= 0 V,
= 4.5 V, I
= 10 V, I
= 45 V, V
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 5 V, I
= 0 V, I
I
V
D
DS
DS
= 200 mA
2
, I
= 20 V
D
D
D
GS
D
D
DD
= 200 mA
DS
= 250 mA
= 500 mA
= 250 mA
= 200 mA
G
= ±20 V
T
= 25 V,
T
T
T
= 25 V,
= 25 W
J
J
J
J
= 125°C
= 25°C
= 25°C
= 85°C
Min
1.0
60
0.28
Typ
1.7
4.0
1.0
1.2
4.4
2.5
0.9
0.2
0.3
0.8
0.7
92
80
26
22
34
34
32
Max
500
±10
1.0
2.5
1.6
2.5
1.2
mV/°C
mV/°C
Unit
mA
mA
pF
nC
ns
W
V
V
S
V